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| 020CY7C10 CY7C1020 32K x 16 Static RAM Features * 5.0V operation ( 10%) * High speed -- tAA = 10 ns * Low active power -- 825 mW (max., 10 ns, "L" version) * Very Low standby power -- 550 W (max., "L" version) * Automatic power-down when deselected * Independent Control of Upper and Lower bytes * Available in 44-pin TSOP II and 400-mil SOJ (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A14). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A14). Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O9 to I/O16. See the truth table at the back of this data sheet for a complete description of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1020 is available in standard 44-pin TSOP type II and 400-mil-wide SOJ packages. Functional Description The CY7C1020 is a high-performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable Logic Block Diagram DATA IN DRIVERS Pin Configuration SOJ / TSOP II Top View NC A 14 A 13 A 12 A11 CE I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A6 A5 A4 A3 A2 A1 A0 32K x 16 RAM Array I/O1 - I/O8 I/O9 - I/O16 COLUMN DECODER BHE WE CE OE BLE 1020-1 A0 A1 A2 OE BHE BLE I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 NC A3 A4 A5 A6 NC ROW DECODER A7 A8 A9 A10 A11 A12 A13 A14 SENSE AMPS 1020-2 Selection Guide 7C1020-10 Maximum Access Time (ns) Maximum Operating Current (mA) L Maximum CMOS Standby Current (mA) L 10 180 150 3 0.1 7C1020-12 12 170 140 3 0.1 7C1020-15 15 160 130 3 0.1 7C1020-20 20 160 130 3 0.1 Cypress Semiconductor Corporation Document #: 38-05058 Rev. ** * 3901 North First Street * San Jose * CA 95134 * 408-943-2600 Revised August 31, 2001 CY7C1020 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. -65C to +150C Ambient Temperature with Power Applied............................................. -55C to +125C Supply Voltage on VCC to Relative GND[1] .... -0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] .....................................-0.5V to VCC +0.5V DC Input Voltage [1] Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA Operating Range Range Commercial Ambient Temperature[2] 0C to +70C VCC 4.5V-5.5V .................................-0.5V to VCC +0.5V Electrical Characteristics Over the Operating Range 7C1020-10 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs [1] 7C1020-12 Min. 2.4 Max. 0.4 2.2 -0.5 -1 -2 6.0 0.8 +1 +2 170 140 20 10 3 100 7C1020-15 Min. 2.4 0.4 2.2 -0.5 -1 -2 6.0 0.8 +1 +2 160 130 20 10 3 100 mA A mA Max. Unit V V V V A A mA Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 Max. 0.4 2.2 -0.5 GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f = 0 L -1 -2 6.0 0.8 +1 +2 180 150 20 ISB1 L 10 3 ISB2 L 100 Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. TA is the case temperature. Document #: 38-05058 Rev. ** Page 2 of 10 CY7C1020 Electrical Characteristics Over the Operating Range (continued) 7C1020-20 Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current VCC Operating Supply Current Automatic CE Power-Down Current --TTL Inputs Automatic CE Power-Down Current --CMOS Inputs [1] Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 Max. 0.4 Unit V V V V A A mA 2.2 -0.5 GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH VIN > VIH or VIN < VIL, f = fMAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V, or VIN < 0.3V, f = 0 L -1 -2 6.0 0.8 +1 +2 160 130 20 ISB1 mA L 10 3 mA A ISB2 L 100 Capacitance[3] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF Note: 3. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms 5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) OUTPUT Equivalent to: THEVENIN EQUIVALENT R2 255 R 481 R 481 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE 167 30 pF R2 255 GND <3 ns 3.0V 90% 10% 90% 10% <3 ns ALL INPUT PULSES (b) 1020-3 1020-4 1.73V Document #: 38-05058 Rev. ** Page 3 of 10 CY7C1020 Switching Characteristics[4] Over the Operating Range 7C1020-10 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD tDBE tLZBE tHZBE tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE tBW Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid OE LOW to Data Valid OE LOW to Low Z OE HIGH to High Z CE LOW to Low Z [5, 6] [6] 7C1020-12 Min. 12 Max. 7C1020-15 Min. 15 Max. 7C1020-20 Min. 20 Max. Unit ns 20 3 20 9 0 8 3 8 0 20 9 0 9 12 12 12 0 0 12 10 0 3 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 9 12 ns ns Description Min. 10 Max. 10 3 10 5 0 5 3 5 0 12 5 0 5 10 8 7 0 0 7 5 0 3 5 7 8 12 9 8 0 0 8 6 0 3 0 0 3 0 3 12 3 12 5 0 6 3 6 0 12 6 0 6 15 10 10 0 0 10 10 0 3 6 9 15 15 7 7 7 15 7 7 CE HIGH to High Z[5, 6] CE LOW to Power-Up CE HIGH to Power-Down Byte enable to Data Valid Byte enable to Low Z Byte disable to High Z [7] WRITE CYCLE Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z [6] WE LOW to High Z[5, 6] Byte enable to end of write 7 Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write, and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Document #: 38-05058 Rev. ** Page 4 of 10 CY7C1020 Switching Waveforms Read Cycle No. 1 [8, 9] tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID 1020-5 Read Cycle No. 2 (OE Controlled) ADDRESS [9, 10] tRC CE tACE OE BHE, BLE tDOE tLZOE tDBE tLZBE HIGH IMPEDANCE tLZCE V CC SUPPLY CURRENT tPU 50% tHZCE tHZBE DATA VALID tPD 50% IISB SB 1020-6 tHZOE HIGH IMPEDANCE DATA OUT IICC CC Notes: 8. Device is continuously selected. OE, CE, BHE and/or BHE = VIL. 9. WE is HIGH for read cycle. 10. Address valid prior to or coincident with CE transition LOW. Document #: 38-05058 Rev. ** Page 5 of 10 CY7C1020 Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled) [11, 12] tWC ADDRESS CE tSA tSCE tAW tPWE WE tBW BHE, BLE tSD DATAI/O tHD tHA 1020-7 Write Cycle No. 2 (BLE or BHE Controlled) tWC ADDRESS BHE, BLE tSA tBW tAW tPWE WE tSCE CE tSD DATAI/O tHD tHA 1020-8 Notes: 11. Data I/O is high impedance if OE or BHE and/or BLE= VIH. 12. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05058 Rev. ** Page 6 of 10 CY7C1020 Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW) tWC ADDRESS CE tSCE tAW tSA tPWE tHA WE tBW BHE, BLE tHZWE DATA I/O tLZWE tSD tHD 1020-10 Truth Table CE H L OE X L WE X H BLE X L L H L X L L L H L L H X H X X H BHE X L H L L H L X H I/O1-I/O8 High Z Data Out Data Out High Z Data In Data In High Z High Z High Z I/O9-I/O16 High Z Data Out High Z Data Out Data In High Z Data In High Z High Z Power-Down Read - All bits Read - Lower bits only Read - Upper bits only Write - All bits Write - Lower bits only Write - Upper bits only Selected, Outputs Disabled Selected, Outputs Disabled Mode Power Standby (ISB) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Active (ICC) Document #: 38-05058 Rev. ** Page 7 of 10 CY7C1020 Ordering Information Speed (ns) 10 Ordering Code CY7C1020-10VC CY7C1020L-10VC CY7C1020-10ZC CY7C1020L-10ZC 12 CY7C1020-12VC CY7C1020L-12VC CY7C1020-12ZC CY7C1020L-12ZC 15 CY7C1020-15VC CY7C1020L-15VC CY7C1020-15ZC CY7C1020L-15ZC 20 CY7C1020-20VC CY7C1020L-20VC CY7C1020-20ZC CY7C1020L-20ZC Package Name V34 V34 Z44 Z44 V34 V34 Z44 Z44 V34 V34 Z44 Z44 V34 V34 Z44 Z44 Package Type 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Lead TSOP Type II 44-Lead TSOP Type II 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Lead TSOP Type II 44-Lead TSOP Type II 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Lead TSOP Type II 44-Lead TSOP Type II 44-Lead (400-Mil) Molded SOJ 44-Lead (400-Mil) Molded SOJ 44-Lead TSOP Type II 44-Lead TSOP Type II Operating Range Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Commercial Package Diagrams 44-Lead (400-Mil) Molded SOJ V34 51-85082-B Document #: 38-05058 Rev. ** Page 8 of 10 CY7C1020 Package Diagrams (continued) 44-Pin TSOP II Z44 51-85087-A Document #: 38-05058 Rev. ** Page 9 of 10 (c) Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1020 Document Title: CY7C1020 32K x 16 Static RAM Document Number: 38-05058 REV. ** ECN NO. 107249 Issue Date 09/10/01 Orig. of Change SZV Description of Change Change from Spec number: 38-00542 to 38-05058 Document #: 38-05058 Rev. ** Page 10 of 10 |
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